LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P) INP MQW BH LASERS/

Authors
SELTZER CP PERRIN SD HARLOW MJ STUDD R SPURDENS PC
Citation
Cp. Seltzer et al., LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P) INP MQW BH LASERS/, Electronics Letters, 30(3), 1994, pp. 227-229
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
3
Year of publication
1994
Pages
227 - 229
Database
ISI
SICI code
0013-5194(1994)30:3<227:LROSII>2.0.ZU;2-K
Abstract
The authors have grown wafers with 16 zero-net-strain and conventional ly strained In0.68Ga00.32As quantum wells and eight strain-compensated In0.34Ga0.16As0.68P0.32 quantum wells. Buried heterostructure lasers were fabricated and reliability studies have been carried out. Initial estimates give lifetimes of around 100 years.