REDUCED THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors
YOUNG DB KAPILA A SCOTT JW MALHOTRA V COLDREN LA
Citation
Db. Young et al., REDUCED THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 30(3), 1994, pp. 233-235
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
3
Year of publication
1994
Pages
233 - 235
Database
ISI
SICI code
0013-5194(1994)30:3<233:RTVSL>2.0.ZU;2-T
Abstract
Etched-pillar vertical-cavity surface-emitting laser structures have b een fabricated incorporating sidewall sulphide passivation to reduce t he surface recombination velocity at the exposed quantum well edges. T he passivated devices exhibit a 25% reduction in surface recombination velocity and a minimum 0.67 mA threshold current.