1.3-MU-M INGAASP HALF DUPLEX TRANSCEIVERS FABRICATED USING A NOVEL CHROMIUM-DOPED SEMIINSULATING BLOCKING STRUCTURE

Authors
LEALMAN IF HARLOW MJ RIVERS LJ SMITH PJ
Citation
If. Lealman et al., 1.3-MU-M INGAASP HALF DUPLEX TRANSCEIVERS FABRICATED USING A NOVEL CHROMIUM-DOPED SEMIINSULATING BLOCKING STRUCTURE, Electronics Letters, 30(3), 1994, pp. 265-266
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
3
Year of publication
1994
Pages
265 - 266
Database
ISI
SICI code
0013-5194(1994)30:3<265:1IHDTF>2.0.ZU;2-X
Abstract
The fabrication of 1.3 mum wavelength half-duplex transceivers using a novel low-capacitance chromium doped InP semi-insulating blocking lay er is reported. The devices offer improved CW performance over convent ional iron doped devices. A capacitance of 0.6pF at -IV bias and a res ponsivity of 0.4A/W were obtained.