11 GHZ ULTRAWIDE-BANDWIDTH MONOLITHIC PHOTORECEIVER USING INGAAS PIN PD AND INALAS INGAAS HEMTS/

A very-wide-bandwidth long-wavelength monolithically integrated photor eceiver is presented which comprises an InGaAs pin PD and a transimped ance amplifier. The receiver uses epilayers grown by one-step MOVPE. T he InGaAs channel high-electron-mobility field effect transistor (HEMT ) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 mum gate lengt h is used for HEMTs to enhance the speed of operation. This receiver s hows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s N RZ signal. This is the first demonstration of a long-wavelength monoli thic photoreceiver receiving a 15Gbit/s light signal.