Y. Akahori et al., 11 GHZ ULTRAWIDE-BANDWIDTH MONOLITHIC PHOTORECEIVER USING INGAAS PIN PD AND INALAS INGAAS HEMTS/, Electronics Letters, 30(3), 1994, pp. 267-268
A very-wide-bandwidth long-wavelength monolithically integrated photor
eceiver is presented which comprises an InGaAs pin PD and a transimped
ance amplifier. The receiver uses epilayers grown by one-step MOVPE. T
he InGaAs channel high-electron-mobility field effect transistor (HEMT
) employs an Si planar-doped carrier supplying layer to obtain larger
transconductance and uniform threshold voltage. The 0.5 mum gate lengt
h is used for HEMTs to enhance the speed of operation. This receiver s
hows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s N
RZ signal. This is the first demonstration of a long-wavelength monoli
thic photoreceiver receiving a 15Gbit/s light signal.