SINGLE-CRYSTAL GROWTH OF SI-GE ALLOY BY ION-IMPLANTATION AND SEQUENTIAL RAPID THERMAL ANNEAL

The single crystal growth of Si-Ge alloy was studied in germanium impl anted silicon substrate. Ge+ ions were implanted on [100], p-type sili con substrate at a dose of 10(16) cm-2. As-implanted samples were anne aled sequentially at a temperature of 700 - 1000-degrees-C for differe nt times in an RTA system to crystalline the amorphous layer. The SNMS technique was used to determine the compositional analysis, and RBS i n the channelling mode was performed to characterise the samples.