INVESTIGATION OF THE MEAN FREE-PATH OF HOT-ELECTRONS IN GAAS ALGAAS HETEROSTRUCTURES/

Authors
KIENER C WIRNER C BOXLEITNER W GORNIK E BOHM G WEIMANN G
Citation
C. Kiener et al., INVESTIGATION OF THE MEAN FREE-PATH OF HOT-ELECTRONS IN GAAS ALGAAS HETEROSTRUCTURES/, Semiconductor science and technology, 9(2), 1994, pp. 193-197
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
2
Year of publication
1994
Pages
193 - 197
Database
ISI
SICI code
0268-1242(1994)9:2<193:IOTMFO>2.0.ZU;2-Z
Abstract
The mean free path of hot electrons in GaAs/AlGaAs heterostructures is investigated. For the first time grating-induced Smith-Purcell emissi on is studied as a function of the grating period length. The mean fre e path is obtained from the changes in intensity and width of the expe rimental spectra by performing a Fourier analysis of the effective int eraction potential. In the direction of the applied electric field a m ean free path of lambda almost-equal-to 300 nm is obtained, whereas pe rpendicular to the electric field the mean free path is smaller (lambd a almost-equal-to 150 nm).