DEPOSITION OF COPPER-OXIDE FILMS BY REACTIVE LASER-ABLATION OF COPPERFORMATE IN AN RF OXYGEN PLASMA AMBIENT

Citation
R. Padiyath et al., DEPOSITION OF COPPER-OXIDE FILMS BY REACTIVE LASER-ABLATION OF COPPERFORMATE IN AN RF OXYGEN PLASMA AMBIENT, Thin solid films, 239(1), 1994, pp. 8-15
Citations number
25
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
239
Issue
1
Year of publication
1994
Pages
8 - 15
Database
ISI
SICI code
0040-6090(1994)239:1<8:DOCFBR>2.0.ZU;2-U
Abstract
The deposition of copper oxide films by reactive laser ablation of cop per formate in the presence of an oxygen r.f plasma ambient has been s tudied. The presence of Cu2O and CuO phases in the films has been iden tified by infrared spectroscopy and by X-ray diffractometry. The films deposited in a flowing oxygen ambient are rich in metallic copper. Th e application of an r.f. discharge results in efficient oxidation of t he ablated copper species, and copper oxide films of varying stoichiom etry can be obtained by systematically altering the discharge characte ristics. Deposition conditions leading to the formation of single-phas e cuprous oxide films (resistivity about 10 Omega cm) have been identi fied and the stoichiometry verified by Auger electron spectroscopy.