R. Padiyath et al., DEPOSITION OF COPPER-OXIDE FILMS BY REACTIVE LASER-ABLATION OF COPPERFORMATE IN AN RF OXYGEN PLASMA AMBIENT, Thin solid films, 239(1), 1994, pp. 8-15
The deposition of copper oxide films by reactive laser ablation of cop
per formate in the presence of an oxygen r.f plasma ambient has been s
tudied. The presence of Cu2O and CuO phases in the films has been iden
tified by infrared spectroscopy and by X-ray diffractometry. The films
deposited in a flowing oxygen ambient are rich in metallic copper. Th
e application of an r.f. discharge results in efficient oxidation of t
he ablated copper species, and copper oxide films of varying stoichiom
etry can be obtained by systematically altering the discharge characte
ristics. Deposition conditions leading to the formation of single-phas
e cuprous oxide films (resistivity about 10 Omega cm) have been identi
fied and the stoichiometry verified by Auger electron spectroscopy.