OPTICAL BAND-GAP OF THIN-FILMS OF SNSE-SNSE2 EUTECTIC ALLOY

Authors
SIDDIQUI SS DESAI CF
Citation
Ss. Siddiqui et Cf. Desai, OPTICAL BAND-GAP OF THIN-FILMS OF SNSE-SNSE2 EUTECTIC ALLOY, Thin solid films, 239(1), 1994, pp. 166-168
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
239
Issue
1
Year of publication
1994
Pages
166 - 168
Database
ISI
SICI code
0040-6090(1994)239:1<166:OBOTOS>2.0.ZU;2-8
Abstract
SnSe and SnSe2 are known p-type and n-type semiconductors respectively . Following an earlier report on the lamellae-structured SnSe-SnSe2 eu tectic alloy, thin films of this alloy have been prepared. The films e xhibit p-type conductivity. From the optical absorptance data, their b and gaps have been evaluated and studied as functions of the film thic kness and deposition temperature. The data indicate absorptance throug h indirect intraband transition with a band gap around 1.1eV. The deta iled results are reported.