SnSe and SnSe2 are known p-type and n-type semiconductors respectively
. Following an earlier report on the lamellae-structured SnSe-SnSe2 eu
tectic alloy, thin films of this alloy have been prepared. The films e
xhibit p-type conductivity. From the optical absorptance data, their b
and gaps have been evaluated and studied as functions of the film thic
kness and deposition temperature. The data indicate absorptance throug
h indirect intraband transition with a band gap around 1.1eV. The deta
iled results are reported.