HALL-EFFECT AND RESISTIVITY OF HIGH-T(C) OXIDES IN THE BIPOLARON MODEL

Authors
ALEXANDROV AS BRATKOVSKY AM MOTT NF
Citation
As. Alexandrov et al., HALL-EFFECT AND RESISTIVITY OF HIGH-T(C) OXIDES IN THE BIPOLARON MODEL, Physical review letters, 72(11), 1994, pp. 1734-1737
Citations number
23
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
72
Issue
11
Year of publication
1994
Pages
1734 - 1737
Database
ISI
SICI code
0031-9007(1994)72:11<1734:HAROHO>2.0.ZU;2-M
Abstract
We discuss the Hall effect and resistivity above T(c), using a variant of the bipolaron theory which takes into account Anderson localizatio n of the bosons by disorder. The model supposes that R(H) = 1/2en(b)C, where n(b) is the number of delocalized carriers. Temperature and dop ing dependences of rho, R(H), cot THETA(H), and the ''spin'' gap in YB a2Cu3O7-delta are explained.