VORTEX PINNING IN ION-IRRADIATED NBSE2 STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Citation
S. Behler et al., VORTEX PINNING IN ION-IRRADIATED NBSE2 STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review letters, 72(11), 1994, pp. 1750-1753
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
72
Issue
11
Year of publication
1994
Pages
1750 - 1753
Database
ISI
SICI code
0031-9007(1994)72:11<1750:VPIINS>2.0.ZU;2-7
Abstract
Vortex pinning by columnar defects in a NbSe2 crystal irradiated with 2.2 GeV Au+14 ions is studied by scanning tunneling microscopy (STM) a t 3 K. The vortex arrangement is clearly resolved in magnetic fields u p to 500 mT and compared to the defect locations, also extracted from STM data. At vortex densities much larger than the defect density, the triangular vortex lattice is perturbed close to the defects. At vorte x densities comparable or smaller, only some defects trap a vortex and the whole vortex arrangement is disordered, although less random than the defect distribution.