OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE

We report on the successful fabrication of SiGe quantum wire structure s on a V-groove patterned substrate by gas-source selective epitaxial growth technique, and their optical properties. Optical anisotropy, sh owing the realization of luminescent SiGe layers with wire geometry, w as clearly observed in electroluminescence from the SiGe layers grown inside the groove.