OBSERVATION OF STIMULATED-EMISSION IN THE NEAR-ULTRAVIOLET FROM A MOLECULAR-BEAM EPITAXY-GROWN GAN FILM ON SAPPHIRE IN A VERTICAL-CAVITY, SINGLE-PASS CONFIGURATION

Authors
YUNG K YEE J KOO J RUBIN M NEWMAN N ROSS J
Citation
K. Yung et al., OBSERVATION OF STIMULATED-EMISSION IN THE NEAR-ULTRAVIOLET FROM A MOLECULAR-BEAM EPITAXY-GROWN GAN FILM ON SAPPHIRE IN A VERTICAL-CAVITY, SINGLE-PASS CONFIGURATION, Applied physics letters, 64(9), 1994, pp. 1135-1137
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
9
Year of publication
1994
Pages
1135 - 1137
Database
ISI
SICI code
0003-6951(1994)64:9<1135:OOSITN>2.0.ZU;2-7
Abstract
We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV op tical emission power was a nonlinear function of the pump power densit y. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalor ganic chemical vapor deposition techniques.