BEHAVIOR OF POROUS SILICON EMISSION-SPECTRA DURING QUENCHING BY IMMERSION IN METAL-ION SOLUTIONS

The photoluminescence emission of porous silicon was regularly measure d while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blu e edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate in to the porous layer correlates with the degree of quenching of the pho toluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the samp le toward the bulk.