QUANTUM-CONFINED STARK-EFFECT MODULATORS AT 1.06-MU-M ON GAAS

Authors
FAN C SHIH DW HANSEN MW ESENER SC WIEDER HH
Citation
C. Fan et al., QUANTUM-CONFINED STARK-EFFECT MODULATORS AT 1.06-MU-M ON GAAS, IEEE photonics technology letters, 5(12), 1993, pp. 1383-1385
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
12
Year of publication
1993
Pages
1383 - 1385
Database
ISI
SICI code
1041-1135(1993)5:12<1383:QSMA1O>2.0.ZU;2-1
Abstract
Electro-absorption modulation is achieved at or near a wavelength of 1 .06 mu m with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-wel1 (MQW) s tructures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional- step-graded buffer array. A dislocation density of less than 10(7)/cm( 2) is estimated for the MQW region. For 80 Angstrom to 100 Angstrom we ll widths, a maximum electro-absorption coefficient of 8000 cm(-1) wit h an applied voltage of 15 V is obtained.