HIGH-GAIN OF A FREE-ELECTRON LASER WITH A GAUSSIAN PROFILE

Authors
LI G FIDDY MA TENG YY
Citation
G. Li et al., HIGH-GAIN OF A FREE-ELECTRON LASER WITH A GAUSSIAN PROFILE, Optics and Laser Technology, 26(1), 1994, pp. 21-24
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Optics and Laser Technology → ACNP
ISSN journal
00303992
Volume
26
Issue
1
Year of publication
1994
Pages
21 - 24
Database
ISI
SICI code
0030-3992(1994)26:1<21:HOAFLW>2.0.ZU;2-8
Abstract
We present a high gain analysis of a free electron laser (FEL) for a n ormalized incident electron energy distribution with a Gaussian profil e. This analysis theoretically demonstrates the existence of a high ga in regime for a FEL with a Gaussian profile with suitable wiggler and electron beam parameters, and explains the experimental results.