SI(001) EPITAXY FROM HYPERTHERMAL BEAMS - CRYSTAL-GROWTH, DOPING, ANDELECTRONIC-PROPERTIES

Epitaxial undoped and Sb-doped Si films have been grown on Si(001) sub strates at temperatures T-s between 80 and 750 degrees C using hyperth ermal Si (average energy [E(Si)] similar or equal to 18 eV) and Sb ([E (Sb)] similar or equal to 14 eV) beams generated by ultra high vacuum Kr+ ion-beam sputtering. Critical epitaxial thicknesses t(e) in undope d films were found to range from 8 nm at T-s=80 degrees C to > 1.2 mu m at T-s greater than or equal to 300 degrees C while Sb incorporation probabilities sigma(Sb) varied from unity at T-s less than or similar to 550 degrees C to similar or equal to 0.1 at 750 degrees C. These t (e) and sigma(Sb) values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved wit h molecular-beam epitaxy. Temperature-dependent transport measurements carried out an 1 mu m-thick Sb-doped layers grown at T-s greater than or equal to 350 degrees C showed that Sb was incorporated into substi tutional sites with complete electrical activity and that electron mob ilities in films grown at T-s greater than or equal to 400 degrees C w ere equal to the best reported results for bulk Si.