SYNTHESIS OF SPUTTERED THIN-FILMS IN LOW-ENERGY ION-BEAMS

Magnetron sputtering is a process which gives a highly energetic depos iting species. The growing film can be further bombarded with ions of the heavy gas used for sputtering by directing a plasma of it onto the surface. This can be done quite simply by using an unbalanced magnetr on. The immersion of an insulating or isolated substrate-film combinat ion in this plasma leads to a self-bias of around 30 V appearing on it 's surface and a bombardment of low energy ions of the sputtering gas of several milli-amps per square centimetre. If the residual gas conta ins a reactive component, to form a compound film, then the gas is mad e much more reactive and less is needed to form the stoichiometric fil m. This can take place in a continuously operating system made stable using partial pressure control of the reactive gas with plasma emissio n monitoring or something similar. It can also be operated when the pr ocess of deposition is separated in time from the process of reaction and is repeated to build the film. We have called this process success ive-plasma-anodisation (SPA) and it can be achieved by mechanically tr ansferring the substrate between two magnetrons, one to deposit the me tal film and one, which is unbalanced, to provide an oxygen plasma. It can also be operated by pulsing the reactive gas under carefully cont rolled conditions. Examples are given of the synthesis of compound fil ms using low energy ion bombardment with these techniques and it is de monstrated that excellent films of a large range of oxides and nitride s can be made.