PROPERTIES OF A NEW ORGANO SILVER COMPOUND FOR MOCVD

e(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Ag(I), (BTMSE)Ag(hfac) was found to be a very promising compound for CVD Ag wiring. It is a soli d at r.t. (m.p. 70 degrees C), has a vapor pressure (10(-3) Ton at r.t .) and high thermal stability, and can be used as a precursor for MOCV D. Thermal and laser CVD silver films were grown on TiN/Si(100) from ( BTMSE)Ag(hfac) in a quartz vacuum chamber, using thermal activation by an electric heater or photo activation through a quartz window with a n excimer laser (XeCl, 308 nm). The chamber pressure was varied from 2 to 30 Torr. The evaporation temperature was kept at 80 degrees C. Ar gas was used as the carrier with a Row rate in the evaporation cylinde r varying from 50 to 200 ccm, A growth rate of 3 nm/min was achieved a t 200 degrees C, an evaporation temperature of 80 degrees C, an argon flow rate of 100 ccm and a chamber pressure of 10 Torr. Resistivities were of the order of about 10(-3) cm depending on the film morphology, With laser CVD, a growth rate of 3 nm/min was achieved by laser activ ation at 80 degrees C, an evaporation temperature of 120 degrees C, an argon flow rate of 100 ccm and a chamber pressure of 10 Ton. Resistiv ities were of the order of about 10(-6) Ohm cm depending on the film m orphology. The laser CVD results were far better than the thermal CVD ones. The film morphology was finer and more evenly distributed with a faster growth rate at much lower temperatures.