K. Baba et R. Hatada, PREPARATION OF AMORPHOUS-CARBON THIN-FILMS BY ION-BEAM-ASSISTED ECR-PLASMA CVD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 129-132
Amorphous carbon thin films have been deposited on austenitic type sta
inless steel, glass and silicon wafer substrates by ion beam assisted
ECR-plasma CVD from CH4 gas as precursors. During the deposition the f
ilms were irradiated with Ar ions with an acceleration voltage of 0.5-
4 kV. The composition and structure of the films were investigated by
Raman and Fourier Transform Infrared (FT-TR) spectroscopies. The hardn
ess and friction coefficients of the films were estimated by a dynamic
ultra micro-hardness tester and a reciprocating sliding tester, respe
ctively. The results showed that the structure and properties of the f
ilms strongly depended on the ion energy and the current density. The
structure of the films changed from polymer to amorphous carbon with i
ncreasing ion energy and ion current density and the films were mainly
composed of sp(3) and sp(2) carbon bonded to hydrogen. The integrated
intensity ratio of amorphous carbon and disordered graphite structure
, I-D/I-G, increased from 0.6 to 1.9 with current density. The carbon
films irradiated with high ion energy showed high hardness and a very
low friction coefficient of 0.035.