IRRADIATION EFFECTS OF O-2 CLUSTER IONS FOR LEAD-OXIDE FILM FORMATION

Authors
AKIZUKI M MATSUO J SHIN I HARADA M OGASAWARA S DOI A YAMADA I
Citation
M. Akizuki et al., IRRADIATION EFFECTS OF O-2 CLUSTER IONS FOR LEAD-OXIDE FILM FORMATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 166-169
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
121
Issue
1-4
Year of publication
1997
Pages
166 - 169
Database
ISI
SICI code
0168-583X(1997)121:1-4<166:IEOOCI>2.0.ZU;2-D
Abstract
O-2 cluster ions were directed onto Si substrates, covered with SiO2, during the evaporation of Pb. By increasing the acceleration voltage, the irradiation of O-2 cluster ions enhanced the oxidation, crystalliz ation and surface smoothing oi. the polycrystalline lead oxide films. They were preferentially oriented in the (111) direction at accelerati on voltages above 5 kV, A significant smoothing effect was observed ev en if the acceleration voltage was as low as 1 kV. A surface roughness of 9 Angstrom was obtained at 7 kV.