HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SI(100) BY REACTIVE IONIZED CLUSTER BEAM DEPOSITION

Heteroepitaxial Y2O3 films on Si(100) have been grown by the technique of reactive ionized cluster beam (ICE) deposition. The composition of deposited film is investigated by using the X-ray photoelectron spect roscopy (XPS). It was found that the composition ratio of Y to O is 1 to 1.46. Using reflection high energy electron diffraction (RHEED) and glancing angle X-ray diffraction (GXRD), we study the crystallinity o f the films. It was noticed that the orientation of deposited film is mainly determined by the substrate temperature and the cluster acceler ation energy. We also found that, without acceleration below 800 degre es C, Y2O3 films were grown as polycrystalline. Under the condition of 5 kV acceleration between Y2O3 and Si(100) is presented as Y2O3(110)/ /Si(100) and Y2O3[110]//Si[100] or Y2O3(110)//Si(100) and Y2O3[100]//S i[100].