CRYSTALLIZATION OF SISN AND SISNC LAYERS IN SI BY SOLID-PHASE EPITAXYAND ION-BEAM-INDUCED EPITAXY

For the synthesis of novel group-IV semiconductors, crystalline growth of amorphous Si1-xSnx and Si1-x-ySnxCy layers in Si formed by Sn and C ion implantation has been investigated with solid phase epitaxial gr owth (SPEG) and ion-beam-induced epitaxial crystallization (IBIEC), Si (100) wafers were implanted at RT with 110 keV or 270 keV Sn-120 ions to a dose up to x = 0.03 at peak concentration and 17 keV or 35 keV C- 12 ions up to y = 0.025 at peak concentration. SPEG experiments at 750 degrees C have shown epitaxial crystallization of the strained alloy layer in the Si1-xSnx/Si sample (x = 0.03) and strain-compensated laye r in the Si1-x-ySnxCy/Si sample with medium C concentration (x = 0.03 and y = 0.019). IBIEC experiments performed with 400 keV Ar ions at 35 0 degrees C have also induced epitaxial crystallization for the Si1-xS nx/Si sample (x = 0.025), whereas those of Si1-x-ySnxCy (x = 0.025 and y = 0.014) have shown a collapse of epitaxial growth, Photoluminescen ce (PL) from SPEG-grown Si1-xSnx and Si1-x-ySnxCy samples has shown ne ither prominent I-1 nor G peaks, Present results have revealed feature s in crystalline growth properties, in both techniques, for the non-th ermal equilibrium fabrication of these new alloy semiconductors.