Y. Murakami et al., STUDY ON THE EFFECT OF THE INTERLAYER ON THE ADHESION OF 400 MU-M THICK-FILM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 212-215
We have studied on the effect of the interlayers on the adhesion of 40
0 mu m thick Ni-TiN gradient films, In order to improve the adhesion o
f the Ni-TiN films, the interlayer films are formed at the interfaces
between the thick films and tungsten carbide substrates (WC-Co). The i
nterlayers have the Si-Ni multilayer structures and are prepared by io
n beam and vapor deposition (IVD) method. The Si interlayers are prepa
red at various internal stresses on tungsten carbide substrates and th
e Ni interlayers also are prepared at various internal stresses on the
Si interlayers. The 400 mu m thick films are formed by cathodic are i
on-plating method on the Si-Ni interlayers. As a result, it seems that
it is possible to improve the adhesion of the thick films by decreasi
ng internal stress mismatch among the lower layers of the thick films,
upper layers of interlayers and lower layers of interlayers.