STUDY ON THE EFFECT OF THE INTERLAYER ON THE ADHESION OF 400 MU-M THICK-FILM

Citation
Y. Murakami et al., STUDY ON THE EFFECT OF THE INTERLAYER ON THE ADHESION OF 400 MU-M THICK-FILM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 212-215
Citations number
5
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
121
Issue
1-4
Year of publication
1997
Pages
212 - 215
Database
ISI
SICI code
0168-583X(1997)121:1-4<212:SOTEOT>2.0.ZU;2-8
Abstract
We have studied on the effect of the interlayers on the adhesion of 40 0 mu m thick Ni-TiN gradient films, In order to improve the adhesion o f the Ni-TiN films, the interlayer films are formed at the interfaces between the thick films and tungsten carbide substrates (WC-Co). The i nterlayers have the Si-Ni multilayer structures and are prepared by io n beam and vapor deposition (IVD) method. The Si interlayers are prepa red at various internal stresses on tungsten carbide substrates and th e Ni interlayers also are prepared at various internal stresses on the Si interlayers. The 400 mu m thick films are formed by cathodic are i on-plating method on the Si-Ni interlayers. As a result, it seems that it is possible to improve the adhesion of the thick films by decreasi ng internal stress mismatch among the lower layers of the thick films, upper layers of interlayers and lower layers of interlayers.