SHALLOW JUNCTION FORMATION IN SI-DEVICES - DAMAGE ACCUMULATION AND THE ROLE OF PHOTOACOUSTIC PROBES AND MULTISPECIES IMPLANTATION

The transition from electronic to nuclear stopping power mechanisms fo r < 10 keV B in Si has resulted in a new class of damage accumulation effects, Strong correlations are seen between beam current, wafer temp erature during implant, anneal conditions and the damage accumulation, diffusion and activation for low-energy B implants, In response to th ese challenges, new characterization methods and processes are being e xplored; such as the use of multi-species implantation and depth profi ling of damage distributions with photo-acoustic probes.