Mi. Current et al., SHALLOW JUNCTION FORMATION IN SI-DEVICES - DAMAGE ACCUMULATION AND THE ROLE OF PHOTOACOUSTIC PROBES AND MULTISPECIES IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 262-266
The transition from electronic to nuclear stopping power mechanisms fo
r < 10 keV B in Si has resulted in a new class of damage accumulation
effects, Strong correlations are seen between beam current, wafer temp
erature during implant, anneal conditions and the damage accumulation,
diffusion and activation for low-energy B implants, In response to th
ese challenges, new characterization methods and processes are being e
xplored; such as the use of multi-species implantation and depth profi
ling of damage distributions with photo-acoustic probes.