FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SBMONOLAYER ON GAAS(110) AND INP(110)

Authors
SCHMIDT WG SRIVASTAVA GP
Citation
Wg. Schmidt et Gp. Srivastava, FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SBMONOLAYER ON GAAS(110) AND INP(110), Solid state communications, 89(4), 1994, pp. 345-348
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
4
Year of publication
1994
Pages
345 - 348
Database
ISI
SICI code
0038-1098(1994)89:4<345:FPCOIP>2.0.ZU;2-Y
Abstract
Vibrations of an epitaxial layer of Sb on the (110) surface of GaAs an d InP have been investigated using first principles pseudopotential ca lculations. The Hellmann-Feynman forces were employed to calculate the dynamical matrix at the Gamma-point. The resulting eigenvalues and ei genmodes are discussed in the context of recent Raman scattering exper iments and tight-binding results.