J. Nakata et al., IN-SITU ION-BEAM ANNEALING OF DAMAGE IN GAAS DURING O IMPLANTATION AND O-SITE DETERMINATION BY O-18(P,ALPHA)N-15 NUCLEAR-REACTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 306-310
Damage introduced by 40 keV O-16,O-18 implantation in the crystalline
GaAs substrate is investigated by the Rutherford backscattering spectr
oscopy (RES) channeling method and cross-sectional transmission electr
on microscopy (X-TEM). Anomalously little damage was formed at room te
mperature (< 43 degrees C), in spite of the large energy density being
deposited in the nuclear scattering process. In-situ ion-beam anneali
ng during irradiation effectively occurred below 43 degrees C, For the
5 x 10(15)/cm(2) dose sample, the RES channeling yield increases with
the annealing temperature, due to the formation of stacking faults, c
onfirmed by X-TEM observation. Yield increase with the temperature was
not observed for lower 1 x 10(15)/cm(2) and higher 1 x 10(16)/cm(2) d
oses. A possible site occupied by (18) 18 O atoms after annealing is d
etermined by O-18(p,alpha)N-15 nuclear reaction. The ratios of channel
ing-yields to the corresponding random-yields for alpha-particles emit
ted from O-18 atoms were compared with simulated results.