IN-SITU ION-BEAM ANNEALING OF DAMAGE IN GAAS DURING O IMPLANTATION AND O-SITE DETERMINATION BY O-18(P,ALPHA)N-15 NUCLEAR-REACTION

Damage introduced by 40 keV O-16,O-18 implantation in the crystalline GaAs substrate is investigated by the Rutherford backscattering spectr oscopy (RES) channeling method and cross-sectional transmission electr on microscopy (X-TEM). Anomalously little damage was formed at room te mperature (< 43 degrees C), in spite of the large energy density being deposited in the nuclear scattering process. In-situ ion-beam anneali ng during irradiation effectively occurred below 43 degrees C, For the 5 x 10(15)/cm(2) dose sample, the RES channeling yield increases with the annealing temperature, due to the formation of stacking faults, c onfirmed by X-TEM observation. Yield increase with the temperature was not observed for lower 1 x 10(15)/cm(2) and higher 1 x 10(16)/cm(2) d oses. A possible site occupied by (18) 18 O atoms after annealing is d etermined by O-18(p,alpha)N-15 nuclear reaction. The ratios of channel ing-yields to the corresponding random-yields for alpha-particles emit ted from O-18 atoms were compared with simulated results.