SI-O BOND FORMATION BY OXYGEN IMPLANTATION INTO SILICON

In an experiment involving implanted oxygen atoms, ready bond formatio n with the substrate Si atoms was observed. Bond formation was confirm ed by infrared absorption spectrum of Si-O vibration; 1100 cm(-1) asym metric stretching mode in this experiment. O-16 or O-18 ions were impl anted into (100) Si substrate at 90-360 keV energy with 2-15 x 10(17)/ cm(2) dose at room temperature similar to 800 degrees C. Infrared abso rption spectrum resembled with thermal oxide one, but absorption peak energy was a little lower with lower dose, lower implantation energy a nd lower substrate temperature, Oxygen dose uniformity and repeatabili ty were nondestructively monitored for SIMOX (Separation by IMplanted OXygen) wafers which is a promising SOI (Silicon On Insulator) candida te for integrated-circuit devices. Rutherford backscattering spectrosc opy was utilized to calibrate dose conversion relation.