PULSED-LASER DEPOSITION OF SILICON FILMS FOR SOLAR-CELL APPLICATIONS

Authors
HANABUSA M LIU ZX NAKAMURA N HASEGAWA H
Citation
M. Hanabusa et al., PULSED-LASER DEPOSITION OF SILICON FILMS FOR SOLAR-CELL APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 367-370
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
121
Issue
1-4
Year of publication
1997
Pages
367 - 370
Database
ISI
SICI code
0168-583X(1997)121:1-4<367:PDOSFF>2.0.ZU;2-0
Abstract
Crystalline silicon thin films were deposited by pulsed laser depositi on on silicon wafers heated to 800 degrees C. The number of particles mixed into the films was reduced by using a short-wavelength ArF laser , Oxygen was incorporated easily in the deposited silicon films unless the deposition chamber was kept in high vacuum before and during depo sition. Using n-type Si targets, we formed a p-n junction on p-type Si wafers. A photovoltaic effect was easily observed under illumination.