M. Hanabusa et al., PULSED-LASER DEPOSITION OF SILICON FILMS FOR SOLAR-CELL APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 367-370
Crystalline silicon thin films were deposited by pulsed laser depositi
on on silicon wafers heated to 800 degrees C. The number of particles
mixed into the films was reduced by using a short-wavelength ArF laser
, Oxygen was incorporated easily in the deposited silicon films unless
the deposition chamber was kept in high vacuum before and during depo
sition. Using n-type Si targets, we formed a p-n junction on p-type Si
wafers. A photovoltaic effect was easily observed under illumination.