FULLERENE ION IRRADIATION TO SILICON

Silicon has been irradiated by singly charged C-60 fullerene ions with an ion dose of up to 1 x 10(13) ions/cm(2) at room temperature in ord er to study the damage formation of cluster ion bombardment on solid s urfaces, Singly and doubly charged fullerene ions and some daughter io ns of fullerene were observed. Mass separation was accomplished by a 9 0 degrees sector magnet. The maximum current of the mass-separated sin gly charged C-60 fullerene ion beam was about 10 nA. RES (Rutherford b ackscattering spectrometry) channeling measurement of the Si(100) bomb arded by 300 keV C-60 ions (i.e. 5.0 keV per carbon atom) shows a rema rkable increase in the surface peak of the defects even at the low ato mic dose of 6 x 10(14) atoms/cm(2). The C-60 fullerene ion beam irradi ation produced many defects. This is one of the typical non-linear eff ects of cluster bombardment.