ADSORPTION AND REACTIONS OF DIETHYLSILANE ON SI(100)

The adsorption and thermal decomposition of diethylsilane on the Si(10 0)2 x 1 surface was studied using temperature programmed desorption ma ss spectrometry and high resolution electron energy loss spectroscopy. Diethylsilane dissociatively adsorbed to a saturation coverage of alm ost-equal-to 0.25 ML. Adsorbate thermal decomposition produced ethylen e and hydrogen which desorbed at 700 and 800 K, respectively. Hydrogen desorption occurred exclusively from the 2 x 1 monohydride state. The rmal decomposition proceeded by beta-hydride elimination which facilit ated the clean removal of the ligand groups, resulting in a carbon-fre e layer of silicon. An additional adsorption process, which eliminated H-2 during the dissociative adsorption, occurred at surface defect si tes.