PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS

Authors
RISTIC G GOLUBOVIC S PEJOVIC M
Citation
G. Ristic et al., PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS, Electronics Letters, 30(4), 1994, pp. 295-296
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
4
Year of publication
1994
Pages
295 - 296
Database
ISI
SICI code
0013-5194(1994)30:4<295:PDW2GO>2.0.ZU;2-I
Abstract
The linearity of threshold voltage shift, during irradiation of thick gate oxide pMOS transistors, operated at zero and negative bias, is in vestigated. It is found that the threshold voltage shift is not linear in the 'zero bias regime'. The linearity increases with an increase i n the absolute value of the negative gate voltage.