HIGH-REFLECTANCE ALPSB GAPSB DISTRIBUTED-BRAGG-REFLECTOR MIRRORS ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

Authors
SHIMOMURA H ANAN T MORI K SUGOU S
Citation
H. Shimomura et al., HIGH-REFLECTANCE ALPSB GAPSB DISTRIBUTED-BRAGG-REFLECTOR MIRRORS ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 30(4), 1994, pp. 314-315
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
4
Year of publication
1994
Pages
314 - 315
Database
ISI
SICI code
0013-5194(1994)30:4<314:HAGDMO>2.0.ZU;2-#
Abstract
Large relractive-index difference, 1.55 mum distributed Bragg reflecto rs, using AlPSb and GaPSb lattice matched to InP, are demonstrated. Th is is the first report of AlPSb/GaPSb quarter-wave distributed Bragg r eflectors. This mirror structure will be useful for InP-based surface- emitting laser applications at long wavelengths.