REAPPEARANCE OF PLASMA-INDUCED OXIDE CHARGE UNDER FOWLER-NORDHEIM STRESS

Authors
LI X HSU JT AUM P BISSEUR V CHAN D VISWANATHAN CR
Citation
X. Li et al., REAPPEARANCE OF PLASMA-INDUCED OXIDE CHARGE UNDER FOWLER-NORDHEIM STRESS, Electronics Letters, 30(4), 1994, pp. 367-368
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
4
Year of publication
1994
Pages
367 - 368
Database
ISI
SICI code
0013-5194(1994)30:4<367:ROPOCU>2.0.ZU;2-R
Abstract
The effect of plasma charging in thin gate oxide was studied under bot h polarities of Fowler-Nordheim (F-N) charge injection. The authors fo und that, although plasma induced oxide charge was temporarily removed , it reappears after F-N current injection. The results reveal that el ectron traps are created in nMOSFETs. whereas hole traps are created i n pMOSFET due to the plasma etching in the process.