DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF ZNSE-GAAS HETEROINTERFACES

A numerical analysis of the deep-level transient spectroscopy of the Z nSe-GaAs heterojunction based on rigorously solving the Poisson equati on and taking account of the interfacial band discontinuity is present ed. By combining the numerical analysis with the experimental measurem ents, properties of the interfacial defects are revealed. It is found that there are donor-like interfacial defects at the ZnSe-GaAs interfa ce with the energy level being located at about 0.5 eV below the condu ction band minimum of GaAs, and with an electron capture cross section of 2.5 x 10(-16) cm(2). The areal density of interfacial defects is d etermined to be 1 x 10(12) cm(2) for ZnSe grown on GaAs substrate trea ted with S2Cl2.