RAPID FORMATION OF ZINC-OXIDE FILMS BY AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION METHOD

Zinc oxide films were prepared by an atmospheric-pressure chemical vap or deposition method using (acetylacetonato)-zinc as a source material . Transparent and uniform ZnO films of considerable area (20 x 70 mm, similar to 0.3 mu m thick) could be obtained easily on a crown glass ( CGW #200) with a high deposition rate. The deposition rate first remai ned constant with increasing substrate temperature (T-s), then increas ed abruptly from 120 nm/min at T-s = 550 degrees C to 220 nm/min at T- s = 600 degrees C, and finally stopped increasing above T-s = 600 degr ees C. The maximum preferred orientation and best crystallinity of the films were obtained at T-s = 550 degrees C.