GALLIUM-ARSENIDE TRANSISTORS - REALIZATION THROUGH A MOLECULARLY DESIGNED INSULATOR

A GaAs-based transistor, analogous to commercial silicon devices, has been fabricated with vapor-deposited cubic GaS as the insulator materi al. The n-channel, depletion mode, GaAs field-effect transistor shows, in addition to classical transistor characteristics,a channel mobilit y of 4665.6 square centimeters per volt per second, an interfacial tra p density of 10(11) per electron volt per square centimeter, and a tra nsconductance of 7 millisiemens for a 5-micrometer gate length at a ga te voltage of 8 volts. Furthermore, the GaAs transistor shows an on-to -off resistance ratio comparable to that of commercial devices.