IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERSCREATED BY ION-BOMBARDMENT

In this paper TEM investigations have been carried out on typical EOR defects found in Ge-amorphized (001) wafers (Ge-->Si, 150 keV, 2X10(15 ) ions/cm(2)) after thermal annealing (RTA, 1000 degrees C, 10 s). The se defects consist of medium sized (10-50 nm) dislocation loops that h ave been characterized by conventional electron microscopic techniques . Most of them (similar to 75%) are circular faulted Frank loops with b = a/3[111] vectors. The remaining (similar to 25%) loops are perfect elongated hexagon-shaped loops: they have nearly (111) habit planes, with b = a/2[101] vectors. Hence, it is possible to deduce from only o ne TEM image the number of Si atoms available in the loops as well as the density of the loops for different implantation or annealing condi tions. This is needed for optimization of process conditions.