ION-IMPLANTATION INDUCED MODIFICATION OF A-SIC-H

Authors
TZENOV N TZOLOV M DIMOVAMALINOVSKA D TSVETKOVA T ANGELOV C ADRIAENSSENS G PATTYN H
Citation
N. Tzenov et al., ION-IMPLANTATION INDUCED MODIFICATION OF A-SIC-H, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 195-198
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
84
Issue
2
Year of publication
1994
Pages
195 - 198
Database
ISI
SICI code
0168-583X(1994)84:2<195:IIMOA>2.0.ZU;2-M
Abstract
Optical transmission measurements have been carried out on thin a-SiC: H alloy films, implanted with ions of group IV elements. High doses of the order of 10(17) cm(-2) have been used leading to a considerable s hift of the absorption edge to lower photon energies. This shift may b e attributed both to additional defect introduction and to accompanyin g formation of bonds between implanted ions and the atoms of the alloy , as confirmed by IR and Raman measurements. The observed chemical mod ification results from the high concentration of introduced atoms whic h is of the order of those for the host elements.