REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/

Authors
ZHANG JP WILSON RJ HEMMENT PLF CLAVERIE A CRISTIANO F SALLES P WEN JQ EVANS JH PEAKER AR PARKER GJ
Citation
Jp. Zhang et al., REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 222-228
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
84
Issue
2
Year of publication
1994
Pages
222 - 228
Database
ISI
SICI code
0168-583X(1994)84:2<222:RBOSSS>2.0.ZU;2-5
Abstract
The synthesis of a buried layer of Si1-xGex alloy by combining high do se Ge+ implantation, amorphisation by high energy Si+ implantation and low temperature solid phase epitaxial regrowth is reported. A Si/Si1- xGex/Si heterostructure with graded interfaces and a maximum Ge concen tration of 7.5 at.% has been successfully formed. The utility of amorp hisation and low temperature solid phase growth across a graded phase boundary, as the last process step (EPIFAB) has been demonstrated. Exa mination of the sample by transmission electron microscopy has failed to resolve any crystallographic defects within the alloy layer, howeve r, as expected, end-of-range defects are buried deep within the silico n substrate.