CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION

Authors
GILES LF MARSH CD NEJIM A HEMMENT PLF BOOKER GR
Citation
Lf. Giles et al., CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 242-247
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
84
Issue
2
Year of publication
1994
Pages
242 - 247
Database
ISI
SICI code
0168-583X(1994)84:2<242:CDSISM>2.0.ZU;2-F
Abstract
Crystallographic defects present in thermal oxidised SIMOX materials h ave been studied by means of plan view transmission electron microscop y (TEM) and chemical defect etching. It is observed that the presence of small stacking fault tetrahedra near the top Si/SiO2 interface infl uence the formation of oxidation induced stacking faults (OISF). An ex planation for this behaviour is given based on the assumption that the se small crystallographic defects contribute to the recombination of s ilicon interstitials emitted during thermal oxidation.