CARRIER GENERATION IN THIN SIMOX FILMS BY DEEP-DEPLETION PULSING OF MOS-TRANSISTORS

Drain current transient techniques for enhancement-mode MOSFETs fabric ated on partially and fully depleted SIMOX films are investigated. The method consists of pulsing one gate in strong accumulation while keep ing the opposite gate in strong or weak inversion. The carrier generat ion lifetime and interface velocity are extracted using Zerbst-type pl ots in order to evaluate the quality of the Si film and Si-SiO2 interf aces. For the first time, the possibility of using drain current trans ients in weak inversion is presented and modeled. This allows improvem ent of the accuracy of the characterization procedure and monitoring o f the time-dependent surface generation velocity. Experimental results on SIMOX are used to support the theoretical derivations and to syste matically investigate the role of the pulse parameters as well as the quality of the structure.