ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF THIN BURIED OXIDES

Authors
MEDA L BERTONI S CEROFOLINI GF GASSEL H
Citation
L. Meda et al., ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF THIN BURIED OXIDES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 270-274
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
84
Issue
2
Year of publication
1994
Pages
270 - 274
Database
ISI
SICI code
0168-583X(1994)84:2<270:EASCOT>2.0.ZU;2-G
Abstract
In this paper a continuous thin BOX obtained by oxygen implantation in to silicon at 200 keV is experimentally studied; the aim of this work is the correlation of BOX structural imperfections (inclusions and pin holes) as seen by transmission electron microscopy (TEM) with the elec trical characteristics measured by capacitors with scaled areas. A met hod for obtaining information on the distribution of the BOX silicon i nclusions from the breakdown voltage is proposed. The heterogeneity of these inclusions is found to affect the current-voltage characteristi cs.