SOME PHYSICAL-PROPERTIES OF THE COMPOUNDS CUINSETE, CUINSES AND CUINSTE THIN-FILMS

The structure, electrical conductivity and Hall coefficient of CulnSeT e, CulnSeS and CulnSTe thin films were measured in the temperature ran ge 100-450K. These compounds have been structurally investigated by X- rays diffraction technique. It was found that all the phases of these materials have chalcopyrite type unit cell with (a = 5.94 angstrom, c = 12.13 angstrom) for CulnSeTe (a = 5.7 angstrom, c = 11.52 angstrom) for CulnSeS and (a = 5.5 2 angstrom, c = 11.08 angstrom) for CulnSTe. It was found that the thin films evaporated at rates from 60 to 80 ang strom S-1 have better, electrical properties than the films grown at h igher evaporation rates. The d.c. conductivity and the mobility data w ere analysed assuming scattering by grain boundary and ionized impurit ies. The calculated values of the carrier concentration were found to be 2.06 x 10(19), 9.64 x 10(17) and 5.5 x 10(18) cm-3 for CulnSeTe, Cu lnSeS and CulnSTe thin films respectively.