STUDIES ON AUGER LIFETIME IN HEAVILY-DOPED IN0.72GA0.28AS0.6P0.4

Authors
DE SS GHOSH AK BERA M HALDER JC HAZRA AK
Citation
Ss. De et al., STUDIES ON AUGER LIFETIME IN HEAVILY-DOPED IN0.72GA0.28AS0.6P0.4, Indian Journal of Pure & Applied Physics, 32(2), 1994, pp. 195-197
Citations number
NO
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
32
Issue
2
Year of publication
1994
Pages
195 - 197
Database
ISI
SICI code
0019-5596(1994)32:2<195:SOALIH>2.0.ZU;2-H
Abstract
A lifetime model has been developed for a heavily doped In0.72Ga0.28As 0.6P0.4 in presence of non-parabolic band structure, band-gap narrowin g and carrier degeneracy. The results are compared with an earlier wor k through numerical computation.