GISAXS - GLANCING INCIDENCE SMALL-ANGLE X-RAY-SCATTERING

In this method, the incident beam is totally externally reflected from a surface or substrate, followed by small-angle scattering of the ref racted (evanescent) beam by the surface region. As one example, GISAXS can provide size information on islands associated with film growth. The technique is described, along with examples from studies of Au on glass, and InAs on silicon. In contrast to TEM this technique is nonde structive, can be done in situ, provides excellent sampling, does not necessarily require synchrotron radiation, and is not limited to thin or conducting substrates.