MULTIPLE-TRAPPING OF HYDROGEN IN ANTIMONY-DOPED SILICON

We have employed Mossbauer spectroscopy and low H implantation to stud y the Sb-H complexes in n-type Si. The different Mossbauer components were studied as a function of H dose, H-implantation temperature, and annealing temperature. To understand the observed data, it is necessar y to introduce, in addition to the well-known SbH complex, an SbH(n) c omplex (n greater-than-or-equal-to 2), which provides experimental evi dence for the existence of donor-multihydrogen complexes. We show that these complexes are in thermal equilibrium with a larger hydrogen res ervoir (H-2), which governs their thermal stability.