HIGH HOLE MOBILITY SI SI1-XGEX/SI HETEROSTRUCTURE/

Authors
JIANG RL LIU JL ZHENG YD ZHENG GZ WEI YY SHEN XC
Citation
Rl. Jiang et al., HIGH HOLE MOBILITY SI SI1-XGEX/SI HETEROSTRUCTURE/, Chinese Physics Letters, 11(2), 1994, pp. 116-118
Citations number
10
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
11
Issue
2
Year of publication
1994
Pages
116 - 118
Database
ISI
SICI code
0256-307X(1994)11:2<116:HHMSSH>2.0.ZU;2-P
Abstract
High mobility Si/Si1-xGex/Si p-type modulation-doped double heterostru ctures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300 cm2/V . s(293 K) and 7500 cm2/V . s(77 K) have been obtained for heterostructures w ith z = 0.3. The variation of hole mobility with temperature and the i nfluence of Ge fraction on hole mobility were investigated.