ELECTROREFLECTANCE STUDY OF STRAINED-LAYER GEXSI1-X SI MULTIPLE-QUANTUM WELLS/

Authors
PAN SH HUANG S CHEN W ZHANG CH SHENG C WANG X
Citation
Sh. Pan et al., ELECTROREFLECTANCE STUDY OF STRAINED-LAYER GEXSI1-X SI MULTIPLE-QUANTUM WELLS/, Chinese Physics Letters, 11(2), 1994, pp. 119-122
Citations number
6
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
11
Issue
2
Year of publication
1994
Pages
119 - 122
Database
ISI
SICI code
0256-307X(1994)11:2<119:ESOSGS>2.0.ZU;2-6
Abstract
A set of strained-layer GexSi1-x/Si multiple quantum wells has been in vestigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0, E1, as well as E0'. The transitions of E0 and E0', which are very weak in the bulk material, are apperently enhanced in quantum wells.