A DESIGN OF NOVEL NVT LEVEL SHIFT CIRCUITS USING MOSFETS

Authors
HYOGO A SEKINE K
Citation
A. Hyogo et K. Sekine, A DESIGN OF NOVEL NVT LEVEL SHIFT CIRCUITS USING MOSFETS, IEICE transactions on fundamentals of electronics, communications and computer science, E77A(2), 1994, pp. 394-397
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture","Computer Science Information Systems
Journal title
IEICE transactions on fundamentals of electronics, communications and computer science → ACNP
ISSN journal
09168508
Volume
E77A
Issue
2
Year of publication
1994
Pages
394 - 397
Database
ISI
SICI code
0916-8508(1994)E77A:2<394:ADONNL>2.0.ZU;2-X
Abstract
Two types of novel nV(T) level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate V(IN)+nV(T) or V(IN)-nV(T) (where V(T) is a threshold voltage), if th e input voltage is applied as the V(IN). These circuits can be widely used in MOSFET characterization, compensating V(T) effect, V(T) measur ement, level shifting, etc. Type 1 is directly derived from the nV(T)- sift circuit proposed by Wang. Type 2 can reduce a total chip area tha n type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consu mption.