VISIBLE PHOTOLUMINESCENCE FROM CHEMICALLY ETCHED POROUS SILICON - INFLUENCE OF THE SURFACE-STATE

Authors
ZOUBIR NH VERGNAT M DELATOUR T BURNEAU A BARRES O
Citation
Nh. Zoubir et al., VISIBLE PHOTOLUMINESCENCE FROM CHEMICALLY ETCHED POROUS SILICON - INFLUENCE OF THE SURFACE-STATE, Solid state communications, 89(8), 1994, pp. 683-686
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
8
Year of publication
1994
Pages
683 - 686
Database
ISI
SICI code
0038-1098(1994)89:8<683:VPFCEP>2.0.ZU;2-1
Abstract
Visible photoluminescence is observed from both n-type and p-type sili con samples subjected to a chemical dipping in NaNO2/HF solutions. Whi le exposure to acidic environment is known to cause staining, this let ter shows that a pre-mechanical abrasion of the silicon surface induce s an enhancement of the emitted light from the entire abraded area. Th e photoluminescence gradually degrades with subsequent thermal treatme nts and visible light completely disappears after an annealing at 400- degrees-C.